Growth of p-Type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O was written by Han, Jeong Hwan;Chung, Yoon Jang;Park, Bo Keun;Kim, Seong Keun;Kim, Hyo-Suk;Kim, Chang Gyoun;Chung, Taek-Mo. And the article was included in Chemistry of Materials in 2014.Related Products of 14123-48-9 This article mentions the following:
A reliable at. layer deposition (ALD) scheme to fabricate p-type Sn monoxide (SnO) films at 90-210 oC is presented for the 1st time using the Sn(II) precursor, bis(1-dimethylamino-2-methyl-2-propoxy)tin, and H2O. The self-limiting features of the SnO ALD process could clearly be observed under wide process conditions. The growth per cycle of the SnO ALD films were varied from 0.61 to 0.08 Å/cycle as the growth temperature was increased from 90 to 210°, and the O/Sn at. composition ratio of ∼1.2 was maintained at all studied temperatures Amorphous and crystalline SnO films were obtained at 90-120° and 150-210°, resp. The deposited SnO films exhibited p-type conductivity with Hall mobility values of 0.4-2.9 cm2/V•s. The carrier concentration and resistivity are in the range of 3.4×1017-1.6×1018 cm-3 and 4.9-14.5 Ω•cm, resp. In the experiment, the researchers used many compounds, for example, 1-(Dimethylamino)-2-methylpropan-2-ol (cas: 14123-48-9Related Products of 14123-48-9).
1-(Dimethylamino)-2-methylpropan-2-ol (cas: 14123-48-9) belongs to alcohols. Because alcohols are easily synthesized and easily transformed into other compounds, they serve as important intermediates in organic synthesis. A multistep synthesis may use Grignard-like reactions to form an alcohol with the desired carbon structure, followed by reactions to convert the hydroxyl group of the alcohol to the desired functionality.Related Products of 14123-48-9
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